Method for removing etching residue using a hydroxylamine-containing composition
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United States of America Patent
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Jan 9, 1996
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app pub date -
Jul 14, 1994
filing date -
Nov 5, 1990
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Abstract
A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.
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