High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices
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United States of America Patent
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Jan 16, 1996
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N/A
app pub date -
Aug 5, 1994
filing date -
Aug 5, 1994
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Abstract
X-ray dispersive and reflective structures utilizing special materials which exhibit improved performance in the specific ranges of interest. The structures are formed of alternating thin layers of uranium, uranium compound or uranium alloy and another spacer material consisting of elements or compounds with low absorptance chosen to match the wavelength of interest. These low index of refraction elements or compounds are those best suited for water window microscopy and nitrogen analysis, or are similar elements or compounds best suited for carbon analysis, boron analysis, and x-ray lithography. The structures are constructed using standard thin layer deposition techniques such as evaporation, sputtering, and CVD, or by novel methods which allow thinner and smoother layers to be deposited.
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