Piezoresistive silicon pressure sensor implementing long diaphragms with large aspect ratios
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United States of America Patent
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Jan 23, 1996
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N/A
app pub date -
Oct 28, 1993
filing date -
Dec 13, 1991
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Abstract
A form of pressure sensor diaphragm and method of making that allows for the formation of long rectangular plate structures in semiconducting material, especially Silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.
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