Anode structure for magnetron sputtering systems

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United States of America Patent

PATENT NO 5487821
SERIAL NO

08425671

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Abstract

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An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

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Patent Owner(s)

  • APPLIED FILMS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hill, Russell J El Cerrito, CA 9 281
Schulz, Stephen C Benicia, CA 27 2504
Sieck, Peter A Santa Rosa, CA 13 346
Vossen, John L Bridgewater, NJ 2 24

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