Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
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United States of America Patent
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Jan 30, 1996
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N/A
app pub date -
Jun 14, 1994
filing date -
Jun 22, 1993
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Abstract
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.
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