Deep ultraviolet microlithography system
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United States of America Patent
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Jan 30, 1996
Grant Date -
N/A
app pub date -
Oct 4, 1994
filing date -
Oct 4, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A high resolution, deep UV photolithography system includes a deep UV radiation source for generating a beam of narrow wavelength deep ultraviolet radiation along a path, mask receiving structure in the path, a first optical system in the path for homogenizing and shaping the deep UV energy in the path; and a second optical system in the path for directing radiation energy onto the surface of a substrate to be processed, the second optical system including large area mirror structure having a numerical aperture of at least 0.3 and a plurality of refractive elements disposed between the mask receiving structure and the substrate for compensating (reducing) image curvature introduced into the system by the large area mirror structure.
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