Method for the fabrication of electrostatic microswitches
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United States of America Patent
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Feb 6, 1996
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N/A
app pub date -
Jun 29, 1994
filing date -
Jun 29, 1994
priority date (Note) -
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Abstract
A method for fabricating an electrostatic microswitch has the steps of depositing a silicon nitride layer over a silicon substrate with an opening therethrough to expose the planned sacrificial layer region; oxidation to form a silicon dioxide sacrificial layer; phosphorus ion implantation into the sacrificial layer; forming a phosphorus-doped polysilicon microbeam of the microswitch and its electrode contacts; lateral etching all of the silicon dioxide sacrificial layer in buffered hydrofluoric acid to form an air gap between the microbeam and the substrate; rinsing the structure in DI water, and then in methanol; and drying the structure by a warm nitrogen flow.
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