Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
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United States of America Patent
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Feb 13, 1996
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N/A
app pub date -
May 9, 1994
filing date -
May 9, 1994
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Abstract
A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.
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