Method for fabricating a solid imaging device having improved smear and breakdown voltage characteristics
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United States of America Patent
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Feb 20, 1996
Grant Date -
N/A
app pub date -
Oct 6, 1994
filing date -
Oct 7, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a method for fabricating a solid imaging device in which an insulation film including at least a silicon oxide film deposited by a chemical vapor deposition method is formed on a surface of the device. An exposed part of the insulation film may be etched prior to forming a shield film, thereby preventing an incident light to enter into all surface of the device except for a photoelectric conversion region.
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