SOI diaphragm sensor
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United States of America Patent
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Feb 20, 1996
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app pub date -
Dec 18, 1992
filing date -
Jan 13, 1989
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Abstract
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
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