Method of making semiconductor wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 27, 1996
Grant Date -
N/A
app pub date -
May 27, 1994
filing date -
Jun 8, 1993
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for a flatter semiconductor wafer free of ORP-observed irregularity and particles generated in handling on the back side of the wafer, in which an alkaline etching is adopted to utilize its advantage and a slight polishing step is combined to a conventional method of this kind. A deficiency of alkaline etching which brings about rougher surface irregularities on the surface of a wafer is eliminated by the use of the step of slight polishing on the back surface after the etching step and the inherent advantage stands without a loss, so that particle generation from the back surface of a semiconductor wafer in handling is much reduced and what's more a flatter semiconductor wafer is realized and a yield of an electronic device fabrication is increased.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully