Hydrogen fluoride dopant source in the preparation of conductive coated substrate
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United States of America Patent
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Mar 5, 1996
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N/A
app pub date -
Aug 29, 1994
filing date -
Aug 29, 1994
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Expired
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Abstract
The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.
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