Method of fabricating a semiconductor nonvolatile storage device
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United States of America Patent
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Mar 5, 1996
Grant Date -
N/A
app pub date -
Jan 25, 1994
filing date -
May 29, 1992
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Abstract
In a semiconductor nonvolatile storage element and a method of fabricating the same wherein the semiconductor nonvolatile storage element having a MONOS structure including a tunnel oxide film (3), a memory nitride film (5), a top oxide film (7) and a memory gate electrode film (9) which are sequentially layered on a semiconductor substrate (1) in this order within storage element regions, the pattern size of the memory gate electrode film (9) within the storage element region is smaller than that of the memory nitride film (7) within the same region. In such an arrangement, the operation of the semiconductor nonvolatile storage element is assured to thereby improve the reliability and data is rewriteable so many times.
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