Semiconductor device having a multi-layered dielectric structure and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 12, 1996
Issued Date -
N/A
app pub date -
Jul 6, 1992
filing date -
Nov 8, 1989
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device and a manufacturing method thereof are disclpsed, the semiconductor device comprising: a first conductive layer; an oxide layer formed upon the first conductive layer; a nitride layer composed of multiple sublayers formed upon the oxide layer; another oxide layer formed upon the nitride layer in the form of multiple sublayers; and a second conductive layer formed upon the structure obtained through the preceding steps. Due to the unique feature of the nitride layer composed of multiple sublayers, the electrical characteristics of the semiconductor device according to the present invention is improved, and the nitride layer according to the present invention is widely applicable to semiconductor devices.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully