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Abstract

The present invention relates to a method for fabricating an amorphous-silicon thin film transistor, which comprises the steps of forming a gate electrode having sloped edges on a substrate, depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed, performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the gate insulation film and thus to form the gate insulation film completely, depositing an amorphous silicon film on the gate insulation film to form an active layer, depositing a n+ type amorphous silicon film over the entire exposed surface of the resulting structure to form an ohmic layer, etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer, forming a source region and a drain region respectively only on portions of the n+ type amorphous silicon film corresponding to both edges of the gate electrode to expose the n+ type amorphous silicon film deposited between the source region and the drain region, removing the exposed portion of the n+ type amorphous silicon film, and forming a protection film over the whole surface of the substrate.

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First Claim