Method for fabricating a CCD image sensor with active transistor pixel
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United States of America Patent
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Mar 19, 1996
Issued Date -
N/A
app pub date -
Mar 29, 1995
filing date -
Apr 14, 1993
priority date (Note) -
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Abstract
An image sensor element having at least one charge storage well 70 and 80, charge transfer structures for transferring charge from one charge storage well 70 to another charge storage well 80, and a charge sensor for sensing charge levels in a charge storage well 70 without removing the charge from the well. Other devices, systems and methods are also disclosed.
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