Method for fabricating a schottky junction
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United States of America Patent
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Mar 19, 1996
Issued Date -
N/A
app pub date -
Jan 21, 1994
filing date -
May 21, 1990
priority date (Note) -
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Abstract
The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.
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