Method of forming a antifuse structure with increased breakdown at edges
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United States of America Patent
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Mar 26, 1996
Issued Date -
N/A
app pub date -
May 8, 1995
filing date -
Aug 21, 1992
priority date (Note) -
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status (Latency Note)
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Abstract
An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the antifuse layer forms a substantially orthogonal angle with the first conductive layer and the second conductive layer. This 'corner' formation of the antifuse enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i.e. the conductive path between the first and second conductive layers. This antifuse provides other advantages including: a relatively low programming voltage, good step coverage for the antifuse layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.
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