Semiconductor memory device capable of low-voltage programming
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United States of America Patent
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Mar 26, 1996
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Feb 25, 1994
filing date -
Aug 16, 1991
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Abstract
A poly-silicon or amorphous silicon plate having cone-like protrusions is provided on a Si substrate in a tunnel window area such that the edges of the protrusions are placed very close to a floating gate. Alternatively, the top surface of a Si substrate is shaped into protrusions.
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