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Abstract

In a semiconductor memory device having a plurality of memory cells and a data output buffer for transferring a data signal from the memory cells to external peripheral circuits, a circuit for controlling the data output buffer, comprising a address transition detector for detecting a transition of an address signal to generate an address transition detect signal in a pulse form, a delay controller for generating a delay control signal, the delay control signal having a logic value set by a manufacturer according to whether the semiconductor memory device has a repaired memory cell, and an output enable signal generator for generating an output enable signal at a time point delayed by a time period from the generation of the address transition detect signal from the address transition detector, the time period being determined based on a logic value of the delay control signal from the delay controller, the output enable signal generator outputting the output enable signal to the data output buffer to control an operating point of the data output buffer. According to the present invention, the operating point of the data output buffer is controlled according to whether the semiconductor memory device has the repaired memory cell. Therefore, the semiconductor memory device has an enhanced data read speed.

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First Claim