Conductive exotic-nitride barrier layer for high-dielectric-constant materials
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United States of America Patent
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Apr 2, 1996
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N/A
app pub date -
Aug 1, 1994
filing date -
Aug 1, 1994
priority date (Note) -
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Abstract
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti--A--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The exotic-nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
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