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Abstract

In forming steps of a recording layer or a dielectric layer of a phase change type optical disk by sputtering, a discharge gas which includes at least one of Kr gas and Xe gas is used. Alternatively, at least one of Ar gas and N.sub.2 gas may be further added to the discharge gas. Forming the recording layer or the dielectric layer of the phase change type optical disk in these discharge gases enables preventing of the introduction of the discharge gas into each layer during the forming steps. As a result, the void generation and growth in the recording layer is suppressed. Consequently, the deterioration of the cycle life characteristics due to repeated overwrite operations can be restrained. Therefore, high reliability and long life of the phase change type optical disk is attained.

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First Claim