Porous silicon trench and capacitor structures
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United States of America Patent
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Apr 16, 1996
Grant Date -
N/A
app pub date -
Oct 28, 1994
filing date -
Oct 28, 1994
priority date (Note) -
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Abstract
The invention provides a capacitor structure utilizing porous silicon as a first plate of the capacitor structure, thereby greatly increasing the surface area available for the capacitor and thereby the capacitance attainable. The invention also provides a trench structure having a porous silicon region surrounding the sidewalks thereof. Such a trench can then be utilized to totem a capacitor according to the subject invention. Methods of producing the capacitor and trench structures according to the subject invention are also provided. Porous silicon is produced utilizing electrolytic anodic etching.
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