CDTE x-ray detector for use at room temperature
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United States of America Patent
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Apr 23, 1996
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app pub date -
Sep 23, 1994
filing date -
Mar 23, 1992
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Abstract
An improved x-ray detector in the form of a p-i-n CdTe homojunction device is disclosed. The intrinsic ('i') layer is of high resistivity CdTe, while the n- and p-doped CdTe layers are epitaxially grown in a photo-assisted process in a molecular beam epitaxial apparatus. The n-dopant is conveniently indium, with an indium metal contact. The 'i' layer is optionally epitaxially grown in a photo-assisted process. The p-dopant is preferably arsenic. A PAMBE formed mercury telluride contact layer enhances the ohmic contact to the p-layer, and a gold contact is provided to the contact layer. The use of the PAMBE technique facilitates high quality crystal growth and activation of the dopants. The resulting CdTe p-i-n homojunction device has a wide band gap (1.45 eV) essential to room temperature operation.
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