Method of forming a thin film
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United States of America Patent
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May 7, 1996
Grant Date -
N/A
app pub date -
Mar 6, 1995
filing date -
Jul 5, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
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