Evaporation method for forming a gas barrier film having an organosilicon dispersed discontinuously in an inorganic matrix
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United States of America Patent
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May 14, 1996
Issued Date -
N/A
app pub date -
Apr 18, 1995
filing date -
Aug 7, 1990
priority date (Note) -
Expired
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Abstract
Films are coated on substrates, useful for applications such as packaging, having a substantially continuous inorganic matrix in which organosilicon moieties are discontinuously dispersed. The inorganic matrix is formed by evaporating an inorganic source within a evacuated chamber while at the same time flowing vaporized organosilicon into the chamber adjacent to an electrically isolated substrate.
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