Importance

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Abstract

A non-volatile semiconductor memory device is constituted by a plurality of thin film memory transistors, each having a control gate electrode formed on an insulating film on a semiconductor substrate, a first gate insulating film covering said control gate electrode, a floating gate electrode formed on said first gate insulating film, a second gate insulating film provided on said floating gate electrode, a channel region of a first conductivity type semiconductor film provided on said second gate insulating film, and source/drain regions of a second conductivity type semiconductor film formed with said channel region being interposed therebetween. A memory device such as an EPROM or FEPROM is formed by using the above thin film memory transistors. The invention provides a semiconductor memory device which operates at a high speed and in which it is possible to achieve a high integration.

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First Claim