Prevention of agglomeration and inversion in a semiconductor polycide process
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United States of America Patent
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May 21, 1996
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N/A
app pub date -
Jul 29, 1994
filing date -
Jul 29, 1994
priority date (Note) -
Expired
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Abstract
Conductors are fabricated by forming a layer of doped polysilicon on a semiconductor substrate, forming a nitrogen-enriched conductive layer on the layer of doped polysilicon, wherein nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof, and patterning the nitrogen-enriched conductive layer and layer of doped polysilicon so as to form the conductors.
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