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Abstract

Apparatus for forming shallow p-n junctions in silicon substrates to produce photovoltaic cells, which apparatus provides three processing chambers. An ultrasonic spray is mounted in the first processing chamber to coat a front surface of the substrate with a liquid dopant-containing material. The second processing chamber dries the coated substrates leaving a dopant-containing residue on the front surface. The third processing chamber fires the substrates in an oxygen-containing environment to diffuse the dopant into the substrate and provide a p-n junction. The apparatus conducts humidified air to each chamber to control polymerization of the dopant source and to prevent non-humidified air from entering the chambers.

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First Claim