Impurity doping method with adsorbed diffusion source
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United States of America Patent
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Jun 18, 1996
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N/A
app pub date -
Feb 18, 1994
filing date -
Jul 27, 1989
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Abstract
For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.
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