Field emitter with focusing ridges situated to sides of gate
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United States of America Patent
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Jun 18, 1996
Grant Date -
N/A
app pub date -
Jan 31, 1994
filing date -
Jan 31, 1994
priority date (Note) -
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Abstract
A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
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