Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
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United States of America Patent
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Jul 2, 1996
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N/A
app pub date -
Apr 17, 1995
filing date -
Apr 17, 1995
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Abstract
A method of adjusting a threshold voltage for a semiconductor device on a semiconductor on insulator substrate includes performing a threshold voltage adjustment implant (25) after formation of a gate structure (16) to reduce the diffusion of implanted dopant (26). Reducing dopant diffusion eliminates the narrow channel effect which degrades device performance. Implanting the dopant (26) after formation of the gate structure (16) simplifies processing of semiconductor device (28) by eliminating a photolithography step which is accomplished by utilizing photoresist (21) used for a source and drain implant (22).
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