Semiconductor device having a corrosion-resistant metal wiring layer
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United States of America Patent
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-
Jul 9, 1996
Grant Date -
N/A
app pub date -
Sep 21, 1992
filing date -
Sep 19, 1991
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A semiconductor device includes a metal wiring layer having a plurality of parallel, actual metal lines, with an endmost one of the actual metal lines being disposed adjacent a wiring-free region. The actual metal lines are electrically connected to an active circuit portion of the semiconductor device. At least one dummy metal line is interposed between the endmost one of the actual metal lines and the wiring-free region, with the at least one dummy metal line being disconnected from the active circuit portion. The dummy metal line(s) serve to prevent corrosion of the actual metal lines when the metal wiring layer is patterned by an etching process.
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