Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
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United States of America Patent
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Jul 9, 1996
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N/A
app pub date -
May 5, 1994
filing date -
May 5, 1994
priority date (Note) -
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Abstract
A transistorless memory cell for storing information as one of two possible bistable current states comprises (i) at least one first transistorless device exhibiting N-type negative differential resistance, including a high-impedance region, a low-impedance region and a negative-resistance region and having a polarity and (ii) at least one second transistorless device exhibiting an exponential or linear current-voltage characteristic and coupled to the first transistorless device. The second transistorless device may be a diode or a resistor. The read/write operation of the transistorless memory cell is performed in a current mode.
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