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Abstract

A silicon capacitive microsensor which is sensitive to acceleration forces includes a silicon capacitive sensing element 10 comprising three silicon layers 12,16,26 having glass dielectric layers 14,24 between each pair of silicon layers with the middle silicon layer 16 consisting of a proof mass 18 suspended between the two glass dielectric layers 14,24 by a silicon hinge 20 which is connected to a slightly thicker silicon support layer 17 around the periphery (FIG. 3 ) between the glass layers 14,24 (FIG. 1 ). Three metallic bond pads 40,42,44 on the surface 45 of the silicon layers 26,16,12, respectively, are soldered to circuit trace pads 108 on a circuit board 100 which has a glass upper layer 104 and a silicon support layer 102. The thermal expansion coefficient between the glass layer 104 and the sensing element 10 are substantially the same, thereby minimizing thermally induced stresses on the sensing element 10 and minimizing inaccuracies associated therewith. Such direct mounting greatly simplifies the manufacturing process for such sensors. Also, such direct mounting eliminates flying leads thereby allowing the sensing element 10 to be fabricated to much smaller dimensions than that of the prior art.

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First Claim