Method of making wide band gap field emitter
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United States of America Patent
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Jul 16, 1996
Issued Date -
N/A
app pub date -
Jun 23, 1994
filing date -
Nov 7, 1991
priority date (Note) -
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Abstract
A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.
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