Nonvolatile semiconductor memory
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United States of America Patent
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Jul 16, 1996
Issued Date -
N/A
app pub date -
Jun 5, 1995
filing date -
Dec 27, 1991
priority date (Note) -
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Abstract
When a current flows through a selected memory cell transistor at the time of data reading, the gate voltage of an n-channel MOS transistor, which makes up the current flowing through the load, rises. Thus, when a current flows through a selected memory cell transistor at the time of data reading, the current through the load is increased so that the time required for data reading when the current flows through the selected memory cell transistor can be shortened and the data reading can be effected at a high speed.
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