Quantum bridges fabricated by selective etching of superlattice structures
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United States of America Patent
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Jul 23, 1996
Grant Date -
N/A
app pub date -
Feb 6, 1995
filing date -
Feb 6, 1995
priority date (Note) -
Expired
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Abstract
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.
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