Compact semiconductor device including a thin film capacitor of high reliability

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United States of America Patent

PATENT NO 5539613
SERIAL NO

08073066

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Abstract

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In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded by an insulator layer of Si.sub.3 N.sub.4.

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Patent Owner(s)

Patent OwnerAddress
NEC CORPORATIONTOKYO 108-8001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyasaka, Yoichi Tokyo, JP 37 859
Sakuma, Toshiyuki Tokyo, JP 37 362
Yamamichi, Shintaro Tokyo, JP 89 1265

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