Compact semiconductor device including a thin film capacitor of high reliability

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5539613
SERIAL NO

08073066

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded by an insulator layer of Si.sub.3 N.sub.4.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC CORPORATIONTOKYO10615

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyasaka, Yoichi Tokyo, JP 34 825
Sakuma, Toshiyuki Tokyo, JP 35 344
Yamamichi, Shintaro Tokyo, JP 89 1091

Cited Art Landscape

Patent Info (Count) # Cites Year
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5206788 Series ferroelectric capacitor structure for monolithic integrated circuits and method 82 1991
 
MICRON TECHNOLOGY, INC. (2)
* 5198384 Process for manufacturing a ferroelectric dynamic/non-volatile memory array using a disposable layer above storage-node junction 65 1991
* 5335138 High dielectric constant capacitor and method of manufacture 255 1993
 
WEEDEN CAPITAL PARTNERS, L.P., 180 MAIDEN LANE, NEW YORK, NEW YORK 10038 (1)
* 5046043 Ferroelectric capacitor and memory cell including barrier and isolation layers 165 1987
 
ROHM CO., LTD. (1)
* 5303182 Nonvolatile semiconductor memory utilizing a ferroelectric film 61 1992
 
KABUSHIKI KAISHA TOSHIBA (1)
* 5227855 Semiconductor memory device having a ferroelectric substance as a memory element 47 1991
 
RADIANT TECHNOLOGY CORPORATION (1)
* 5212620 Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers 19 1992
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MATSUSHITA ELECTRONICS CORPORATION (1)
* 6166424 Capacitance structure for preventing degradation of the insulating film 16 1998
 
VISHAY INTERTECHNOLOGY, INC. (6)
* 6621142 Precision high-frequency capacitor formed on semiconductor substrate 6 2002
* 6621143 Precision high-frequency capacitor on semiconductor substrate 4 2002
8004063 Precision high-frequency capacitor formed on semiconductor substrate 1 2006
* 2010/0295,152 Precision high-frequency capacitor formed on semiconductor substrate 0 2006
8324711 Precision high-frequency capacitor formed on semiconductor substrate 2 2011
* 2011/0176,247 PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 0 2011
 
Ultrasource, Inc. (11)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
* 2004/0081,811 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
RPX CORPORATION (1)
6562677 Capacitance element and method of manufacturing the same 5 2000
 
TDK CORPORATION (2)
* 8351185 Electronic component and manufacturing method thereof 1 2010
* 2011/0044,011 ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF 0 2010
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 6818498 Capacitance element and method of manufacturing the same 8 2003
 
VISHAY-SILICONIX (2)
9136060 Precision high-frequency capacitor formed on semiconductor substrate 0 2007
* 2008/0108,202 PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 0 2007
* Cited By Examiner