Method for manufacturing a semiconductor device using a catalyst
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United States of America Patent
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Aug 6, 1996
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app pub date -
Nov 16, 1994
filing date -
Dec 1, 1993
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Abstract
A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.
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