Optically immersed semiconductor photodetectors
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United States of America Patent
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Aug 13, 1996
Grant Date -
N/A
app pub date -
Jun 28, 1994
filing date -
Jun 28, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Optical immersion of a semiconductor photodetector to a plano-convex lens is obtained with a spring arranged to urge the photodetector to abut the lens. To facilitate alignment of the detector and the lens, the spring defines, in one embodiment, a convex surface to abut a substrate that carries the detector. In another embodiment, alignment is facilitated by a ball positioned between the spring and the substrate. Optical noise is reduced by a dielectric between the detector and the lens, with the dielectric thickness less than 1/10 of any radiation wavelength of interest.
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