Semiconductor device having a metallic silicide layer for improved operational rates
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United States of America Patent
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Aug 13, 1996
Grant Date -
N/A
app pub date -
Jun 23, 1994
filing date -
Jun 25, 1993
priority date (Note) -
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Abstract
A polycrystal silicon electrode and a side wall are formed in a method for manufacturing a semiconductor device. Thereafter, air is exhausted from a film forming chamber until a vacuum degree of 4.times.10.sup.-8 Torr. A mixing gas of N.sub.2 and argon (At) is introduced into this chamber with 60 sccm and a pressure within the chamber is set to 2.0 mTorr. A percentage of N.sub.2 to argon (Ar) in this mixing gas atmosphere is set to 10%. Direct current power 6 kW is applied to a titanium target having 99.998% in purity and 12 inches in length so that the titanium target is sputtered and formed as a titanium film including nitrogen. The titanium film is processed rapidly and thermally for 30 seconds at a temperature of 750 .degree. C. by using a xenon (Xe) arc lamp. Thus, a silicide film is uniformly formed selectively on a silicon substrate and the polycrystal silicon electrode. In this manufacturing method, it is possible to prevent agglomeration of the silicide film at a high temperature processing time after the silicide film is formed.
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