Non-volatile semiconductor memory device and memory system using the same
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United States of America Patent
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Aug 13, 1996
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N/A
app pub date -
Oct 20, 1994
filing date -
Dec 19, 1991
priority date (Note) -
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Abstract
The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
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