Method for forming a copper metal wiring with aluminum containing oxidation barrier
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United States of America Patent
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Aug 20, 1996
Grant Date -
N/A
app pub date -
May 19, 1995
filing date -
May 24, 1994
priority date (Note) -
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Abstract
A method for forming a metal wiring of a semiconductor element, which uses an aluminum film as an oxidation prevention film to prevent oxygen from being diffused into copper contained in the metal wiring. An aluminum oxidation prevention film layer is selectively formed on an exposed surface of the copper metal wiring layer using a selective chemical vapor deposition method. The width of the aluminum layer formed is below 100.ANG., and is converted into Al.sub.2 O.sub.3 at heat treating or under an atmosphere, thereby preventing the copper from oxidation. A diffusion prevention film between the substrate and the copper metal wiring layer is further included for preventing the copper from diffusing into the substrate.
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