Importance

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Abstract

A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.

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First Claim