Method for forming capped copper electrical interconnects
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United States of America Patent
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Aug 27, 1996
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N/A
app pub date -
May 12, 1995
filing date -
May 12, 1995
priority date (Note) -
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Abstract
The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust electrical interconnect structure. A method for obtaining such capped copper electrical interconnect structure is also disclosed. These capped interconnects can be a single layer or multi-layer structures. Similarly, the interconnect structure that is being capped can itself be composed of single or multi-layered material.
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