Methods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopy

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United States of America Patent

PATENT NO 5550374
SERIAL NO

08241972

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Abstract

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Nondestructive methods and apparatus for determining a concentration of interstitial oxygen in a generally cylindrical body of crystalline silicon. The invention transmits an infrared (IR) beam through the body generally transverse to a longitudinal axis of the body and measures the absorption coefficient of an interstitial oxygen absorption band at a wavenumber W.sub.p of approximately 1720 cm.sup.-1. Further, the invention determines the concentration of interstitial oxygen in the body as a function of the measured absorption coefficient.

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Patent Owner(s)

Patent OwnerAddress
MEMC ELECTRONIC MATERIALS INC501 PEARL DRIVE P O BOX 8 ST PETERS MO 63376-5000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Drescher, Klaus Bochum, DE 3 11
Holzer, Joseph C Manchester, MO 37 471
Korb, Harold W Ballwin, MO 25 212

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