Importance

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Abstract

A polycrystalline silicon film which is to be a channel is in a trench provided in a main surface of a silicon substrate. A gate insulating film is on the periphery of a polycrystalline silicon film. A gate electrode is on the periphery of the gate insulating film. A silicon oxide film is on the periphery of the gate electrode. A source/drain film is on the periphery of the silicon oxide film. A silicon oxide film is on the periphery of the source/drain film. A source/drain film is electrically connected to the polycrystalline silicon film. A source/drain film is electrically connected to the polycrystalline silicon film. Since the polycrystalline silicon film extends along the depth direction of trench, a channel length can be sufficient to prevent a short channel effect. Also, compared to the case in which an epitaxial layer is used as a channel, since the polycrystalline silicon film is used as a channel, the time required for manufacturing the device can be shortened.

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First Claim