High thermal emissive semiconductor device package

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5552635
SERIAL NO

08370389

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed herein is a high thermal emissive semiconductor device package which comprises a substrate having a plurality of external connection leads, a plurality of connection lands and wires between the leads and the lands; at least one semiconductor chips mounted on the substrate; bonding wires electrically connecting bonding pads of the chip and the connection lands of the substrate; a heat spreader with high thermal conductivity, which is attached to the upper surface of the bonding pads of the chip by insulating adhesives with good thermal conductivity; and a metal cap which is in contact with the upper surface of the heat spreader via thermal compounds and encapsulates the whole components by being sealed to the substrate. The high thermal emissive semiconductor device packages have advantageous that they efficiently emit heat generated during the operation of components and that they may be applied to various semiconductor devices which can be produced at low costs.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO VA 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Seung H Suwon, KR 6 601
Kim, Gu S Suwon, KR 6 527
Kim, Jong G Seoul, KR 4 255
Park, Jae M Seoul, KR 37 1946

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