Thin film transistor redundancy structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 3, 1996
Grant Date -
N/A
app pub date -
Sep 27, 1994
filing date -
Sep 27, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a microcircuit device such as a memory chip, where a bank of state devices such as fuses and anti-fuses determine the enabling and disabling of redundant circuitry, a scheme for blowing one or more state devices by applying a programming voltage through a switching circuit comprising thin film transistors (TFTs) which are not damaged by the device blowing, programming voltage. The TFTs can be activated by a low voltage enable signal provided by a state device designator logic module.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully